Operating principles of reactance-less memristor-based oscillators
- 作者: Rakitin V.V.1,2, Rusakov S.G.1
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隶属关系:
- Institute for Design Problems in Microelectronics
- Lukin Scientific Research Institute of Physical Problems
- 期: 卷 62, 编号 6 (2017)
- 页面: 621-625
- 栏目: Physical Processes in Electron Devices
- URL: https://journals.rcsi.science/1064-2269/article/view/198453
- DOI: https://doi.org/10.1134/S1064226917060183
- ID: 198453
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详细
The aspects of design of reactance-less oscillators based on memristors are considered. The requirements on load elements in the circuits of such oscillators are formulated. The equations describing the dynamical behavioral of the memristor oscillators with the use of linear-drift models are presented. Examples of the analysis and synthesis of oscillators using such equations are presented. The possibility of generation in the circuits under consideration of periodic signals with a waveform close to harmonic oscillations is shown.
作者简介
V. Rakitin
Institute for Design Problems in Microelectronics; Lukin Scientific Research Institute of Physical Problems
Email: rusakov@ippm.ru
俄罗斯联邦, Zelenograd, Moscow, 124365; Zelenograd, Moscow, 124460
S. Rusakov
Institute for Design Problems in Microelectronics
编辑信件的主要联系方式.
Email: rusakov@ippm.ru
俄罗斯联邦, Zelenograd, Moscow, 124365
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