Journal of Communications Technology and Electronics
ISSN 1064-2269 (Print)
ISSN 1555-6557 (Online)
Menu
Archives
Home
About the Journal
Editorial Team
Editorial Policies
Author Guidelines
About the Journal
Issues
Search
Current
Retracted articles
Archives
Contact
All Journals
Reference materials
Instructions for using the platform
Instructions for signing an agreement for RAS journals
User
Username
Password
Remember me
Forgot password?
Register
Notifications
View
Subscribe
Search
Search
Search Scope
All
Authors
Title
Abstract
Index terms
Full Text
Browse
By Issue
By Author
By Title
By Sections
Other Journals
Subscription
Login to verify subscription
Keywords
Keywords
: wireless network
FPA
HgCdTe
InGaAs
InGaAs/InP
MCT
UAV
Wi-Fi
avalanche photodiode
combinatorial optimization
dark current
extremal ellipsoids
heteroepitaxial structures
image restoration
indium antimonide
interband tunnel current
neural networks
noise
photodetector
photodiode
photosensitivity
×
User
Username
Password
Remember me
Forgot password?
Register
Notifications
View
Subscribe
Search
Search
Search Scope
All
Authors
Title
Abstract
Index terms
Full Text
Browse
By Issue
By Author
By Title
By Sections
Other Journals
Subscription
Login to verify subscription
Keywords
Keywords
: wireless network
FPA
HgCdTe
InGaAs
InGaAs/InP
MCT
UAV
Wi-Fi
avalanche photodiode
combinatorial optimization
dark current
extremal ellipsoids
heteroepitaxial structures
image restoration
indium antimonide
interband tunnel current
neural networks
noise
photodetector
photodiode
photosensitivity
Home
>
Search
>
Author Details
Author Details
Smirnov, D. V.
Issue
Section
Title
File
Vol 61, No 3 (2016)
Articles from the Russian Journal Prikladnaya Fizika
Characteristics of heteroepitaxial structures Al
x
Ga
1–
x
N for
p
–
i
–
n
diode focal plane arrays
TOP
