Epitaxy of GaN(0001) and GaN(10\(\bar {1}\)1) Layers on Si(100) Substrate
- 作者: Bessolov V.1, Kompan M.1, Konenkova E.1, Panteleev V.1, Rodin S.1, Shcheglov M.1
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隶属关系:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- 期: 卷 45, 编号 6 (2019)
- 页面: 529-532
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208323
- DOI: https://doi.org/10.1134/S106378501906004X
- ID: 208323
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详细
Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10\(\bar {1}\)1) on a V-shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(10\(\bar {1}\)1) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ωθ ~ 45 arcmin, whereas for the semipolar GaN(10\(\bar {1}\)1), these values are –0.29 GPa and ωθ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.
作者简介
V. Bessolov
Ioffe Physical Technical Institute, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: bes.triat@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Kompan
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: bes.triat@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Konenkova
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: bes.triat@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Panteleev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: bes.triat@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Rodin
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: bes.triat@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Shcheglov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: bes.triat@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021