Epitaxy of GaN(0001) and GaN(10\(\bar {1}\)1) Layers on Si(100) Substrate
- Authors: Bessolov V.N.1, Kompan M.E.1, Konenkova E.V.1, Panteleev V.N.1, Rodin S.N.1, Shcheglov M.P.1
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Affiliations:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- Issue: Vol 45, No 6 (2019)
- Pages: 529-532
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208323
- DOI: https://doi.org/10.1134/S106378501906004X
- ID: 208323
Cite item
Abstract
Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10\(\bar {1}\)1) on a V-shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(10\(\bar {1}\)1) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ωθ ~ 45 arcmin, whereas for the semipolar GaN(10\(\bar {1}\)1), these values are –0.29 GPa and ωθ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.
About the authors
V. N. Bessolov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Author for correspondence.
Email: bes.triat@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. E. Kompan
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: bes.triat@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. V. Konenkova
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: bes.triat@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. N. Panteleev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: bes.triat@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. N. Rodin
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: bes.triat@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. P. Shcheglov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: bes.triat@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021