Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System)


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The effect of increasing the tunnel current in a metal–calcium fluoride–silicon structure with addition of a silicon dioxide layer between fluoride and metal (which seems paradoxical at first glance) has been considered. This effect of nonmonotonic change in the tunnel conductivity with an increase in the insulator thickness may occur at a relatively high bias at the structure and is related to the tunnel-barrier deformation, at which electrons are tunneling through its part formed by the oxide. At low biases, the occurrence/ thickening of an additional layer leads to a natural decrease in the current. Similar behavior is possible in principle for some other combinations of materials.

作者简介

Yu. Illarionov

Ioffe Physical Technical Institute; Institute of Microelectronics

Email: vexler@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; Vienna, 1040

A. Banshchikov

Ioffe Physical Technical Institute

Email: vexler@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

N. Sokolov

Ioffe Physical Technical Institute

Email: vexler@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

S. Wachter

Institute of Photonics

Email: vexler@mail.ioffe.ru
奥地利, Vienna, 1040

M. Vexler

Ioffe Physical Technical Institute

编辑信件的主要联系方式.
Email: vexler@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021


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