The capacitive properties of structures based on mesoporous silicon irradiated by low-dose γ rays
- 作者: Galushka V.1, Zharkova E.1, Terin D.1, Sidorov V.1, Khasina E.1
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隶属关系:
- Saratov State University
- 期: 卷 43, 编号 11 (2017)
- 页面: 987-989
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/206354
- DOI: https://doi.org/10.1134/S1063785017110049
- ID: 206354
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详细
The influence of low doses of γ rays on the capacitive properties of structures based on mesoporous silicon has been investigated. The concentration distribution of dangling charged bonds over the layer depth, which changes under irradiation, has been found using the capacitance–voltage characteristics at different frequencies of the test signal. It is shown that the concentration and relaxation time of surface charged states in a structure with a mesoporous silicon layer decrease under γ irradiation, which makes the material promising for devices with controlled reactance (varactors) that are resistant to γ irradiation.
作者简介
V. Galushka
Saratov State University
编辑信件的主要联系方式.
Email: lab32@mail.ru
俄罗斯联邦, Saratov, 410012
E. Zharkova
Saratov State University
Email: lab32@mail.ru
俄罗斯联邦, Saratov, 410012
D. Terin
Saratov State University
Email: lab32@mail.ru
俄罗斯联邦, Saratov, 410012
V. Sidorov
Saratov State University
Email: lab32@mail.ru
俄罗斯联邦, Saratov, 410012
E. Khasina
Saratov State University
Email: lab32@mail.ru
俄罗斯联邦, Saratov, 410012