The capacitive properties of structures based on mesoporous silicon irradiated by low-dose γ rays
- Authors: Galushka V.V.1, Zharkova E.A.1, Terin D.V.1, Sidorov V.I.1, Khasina E.I.1
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Affiliations:
- Saratov State University
- Issue: Vol 43, No 11 (2017)
- Pages: 987-989
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/206354
- DOI: https://doi.org/10.1134/S1063785017110049
- ID: 206354
Cite item
Abstract
The influence of low doses of γ rays on the capacitive properties of structures based on mesoporous silicon has been investigated. The concentration distribution of dangling charged bonds over the layer depth, which changes under irradiation, has been found using the capacitance–voltage characteristics at different frequencies of the test signal. It is shown that the concentration and relaxation time of surface charged states in a structure with a mesoporous silicon layer decrease under γ irradiation, which makes the material promising for devices with controlled reactance (varactors) that are resistant to γ irradiation.
About the authors
V. V. Galushka
Saratov State University
Author for correspondence.
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
E. A. Zharkova
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
D. V. Terin
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
V. I. Sidorov
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
E. I. Khasina
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012