The effect of working gas pressure on the switching rate of a kivotron
- Авторлар: Bokhan P.A.1, Gugin P.P.1, Zakrevsky D.E.1, Lavrukhin M.A.1
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Шығарылым: Том 42, № 5 (2016)
- Беттер: 451-455
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/198954
- DOI: https://doi.org/10.1134/S1063785016050047
- ID: 198954
Дәйексөз келтіру
Аннотация
The switching rate in gas-discharge devices (kivotrons) based on an “open” discharge with counterpropagating electron beams is studied experimentally. Structures with a total cathode area of 2 cm2 were used. A monotonic reduction in the switching time with an increase in the working gas pressure and in the voltage amplitude at the time of breakdown is demonstrated. The minimum switching time is ~240 ps at a voltage of 17 kV. The maximum current rise rate, which is limited by the discharge circuit inductance, is 3 × 1012 A/s.
Авторлар туралы
P. Bokhan
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090
P. Gugin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090
D. Zakrevsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Хат алмасуға жауапты Автор.
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090
M. Lavrukhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090
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