The effect of working gas pressure on the switching rate of a kivotron
- Autores: Bokhan P.A.1, Gugin P.P.1, Zakrevsky D.E.1, Lavrukhin M.A.1
-
Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Edição: Volume 42, Nº 5 (2016)
- Páginas: 451-455
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/198954
- DOI: https://doi.org/10.1134/S1063785016050047
- ID: 198954
Citar
Resumo
The switching rate in gas-discharge devices (kivotrons) based on an “open” discharge with counterpropagating electron beams is studied experimentally. Structures with a total cathode area of 2 cm2 were used. A monotonic reduction in the switching time with an increase in the working gas pressure and in the voltage amplitude at the time of breakdown is demonstrated. The minimum switching time is ~240 ps at a voltage of 17 kV. The maximum current rise rate, which is limited by the discharge circuit inductance, is 3 × 1012 A/s.
Sobre autores
P. Bokhan
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090
P. Gugin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090
D. Zakrevsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Autor responsável pela correspondência
Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090
M. Lavrukhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090
Arquivos suplementares
