Discharge development and minimum switching time in a kivotron
- 作者: Bokhan P.1, Gugin P.1, Zakrevsky D.1, Lavrukhin M.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- 期: 卷 42, 编号 4 (2016)
- 页面: 372-375
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/198521
- DOI: https://doi.org/10.1134/S1063785016040064
- ID: 198521
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详细
Experimental studies of the breakdown stage in a kivotron, a high-voltage switching device based on an open discharge with counterpropagating electron beams, are performed. It is demonstrated that a fast stage of the breakdown is provided by photoemission of resonance radiation of fast atoms with large Doppler shift with respect to the line center of thermal atoms. For working pressure pHe ≈ 20 Torr, switching time τs ≈ 80 ps is achieved. The estimated minimum switching time is ~35 ps.
作者简介
P. Bokhan
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
P. Gugin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
D. Zakrevsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: zakrdm@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
M. Lavrukhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090