Discharge development and minimum switching time in a kivotron
- Авторлар: Bokhan P.1, Gugin P.1, Zakrevsky D.1, Lavrukhin M.1
-
Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Шығарылым: Том 42, № 4 (2016)
- Беттер: 372-375
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/198521
- DOI: https://doi.org/10.1134/S1063785016040064
- ID: 198521
Дәйексөз келтіру
Аннотация
Experimental studies of the breakdown stage in a kivotron, a high-voltage switching device based on an open discharge with counterpropagating electron beams, are performed. It is demonstrated that a fast stage of the breakdown is provided by photoemission of resonance radiation of fast atoms with large Doppler shift with respect to the line center of thermal atoms. For working pressure pHe ≈ 20 Torr, switching time τs ≈ 80 ps is achieved. The estimated minimum switching time is ~35 ps.
Негізгі сөздер
Авторлар туралы
P. Bokhan
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090
P. Gugin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090
D. Zakrevsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Хат алмасуға жауапты Автор.
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090
M. Lavrukhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: zakrdm@isp.nsc.ru
Ресей, Novosibirsk, 630090