A study of the effect of electron and proton irradiation on 4H-SiC device structures
- Авторы: Lebedev A.1, Davydovskaya K.1, Yakimenko A.2, Strel’chuk A.1, Kozlovskii V.2
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Учреждения:
- Ioffe Physical Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- Выпуск: Том 43, № 11 (2017)
- Страницы: 1027-1029
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/206540
- DOI: https://doi.org/10.1134/S1063785017110256
- ID: 206540
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Аннотация
The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration (Nd–Na) in the base electrode of Schottky diodes and JBS diodes based on 4H-SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate was 0.07–0.15 cm–1 under electron irradiation and 50–70 cm–1 under proton irradiation. It was shown that the current–voltage characteristics of the devices under study remain rectifying at electron irradiation doses of up to ~1017 cm–2. It was demonstrated that the radiation hardness of the SiC-based devices under study substantially exceeds that of silicon p–i–n diodes with similar breakdown voltages.
Об авторах
A. Lebedev
Ioffe Physical Technical Institute
Автор, ответственный за переписку.
Email: shura.lebe@mail.ioffe.ru
Россия, St. Petersburg, 194021
K. Davydovskaya
Ioffe Physical Technical Institute
Email: shura.lebe@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Yakimenko
Peter the Great St. Petersburg Polytechnic University
Email: shura.lebe@mail.ioffe.ru
Россия, St. Petersburg, 195251
A. Strel’chuk
Ioffe Physical Technical Institute
Email: shura.lebe@mail.ioffe.ru
Россия, St. Petersburg, 194021
V. Kozlovskii
Peter the Great St. Petersburg Polytechnic University
Email: shura.lebe@mail.ioffe.ru
Россия, St. Petersburg, 195251