A study of the effect of electron and proton irradiation on 4H-SiC device structures
- 作者: Lebedev A.1, Davydovskaya K.1, Yakimenko A.2, Strel’chuk A.1, Kozlovskii V.2
-
隶属关系:
- Ioffe Physical Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- 期: 卷 43, 编号 11 (2017)
- 页面: 1027-1029
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/206540
- DOI: https://doi.org/10.1134/S1063785017110256
- ID: 206540
如何引用文章
详细
The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration (Nd–Na) in the base electrode of Schottky diodes and JBS diodes based on 4H-SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate was 0.07–0.15 cm–1 under electron irradiation and 50–70 cm–1 under proton irradiation. It was shown that the current–voltage characteristics of the devices under study remain rectifying at electron irradiation doses of up to ~1017 cm–2. It was demonstrated that the radiation hardness of the SiC-based devices under study substantially exceeds that of silicon p–i–n diodes with similar breakdown voltages.
作者简介
A. Lebedev
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: shura.lebe@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
K. Davydovskaya
Ioffe Physical Technical Institute
Email: shura.lebe@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Yakimenko
Peter the Great St. Petersburg Polytechnic University
Email: shura.lebe@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
A. Strel’chuk
Ioffe Physical Technical Institute
Email: shura.lebe@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Kozlovskii
Peter the Great St. Petersburg Polytechnic University
Email: shura.lebe@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251