Enviar artigo por via de e-mail Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots
- Autores: Zubov F.1, Moiseev E.1, Kornyshov G.1, Kryzhanovskaya N.1, Shernyakov Y.2, Payusov A.2, Kulagina M.2, Kalyuzhnyi N.2, Mintairov S.2, Maximov M.1, Zhukov A.1
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Afiliações:
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- Edição: Volume 45, Nº 10 (2019)
- Páginas: 994-996
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208447
- DOI: https://doi.org/10.1134/S1063785019100158
- ID: 208447
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Resumo
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 μm is formed near the side surface, which leads to a decrease in the effective current flow area.
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Sobre autores
F. Zubov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Rússia, St. Petersburg
E. Moiseev
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Rússia, St. Petersburg
G. Kornyshov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Rússia, St. Petersburg
N. Kryzhanovskaya
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Rússia, St. Petersburg
Yu. Shernyakov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: zhukale@gmail.com
Rússia, St. Petersburg, 194021
A. Payusov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: zhukale@gmail.com
Rússia, St. Petersburg, 194021
M. Kulagina
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: zhukale@gmail.com
Rússia, St. Petersburg, 194021
N. Kalyuzhnyi
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: zhukale@gmail.com
Rússia, St. Petersburg, 194021
S. Mintairov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: zhukale@gmail.com
Rússia, St. Petersburg, 194021
M. Maximov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Rússia, St. Petersburg
A. Zhukov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Autor responsável pela correspondência
Email: zhukale@gmail.com
Rússia, St. Petersburg
