Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots


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Abstract

Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 μm is formed near the side surface, which leads to a decrease in the effective current flow area.

About the authors

F. I. Zubov

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
Russian Federation, St. Petersburg

E. I. Moiseev

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
Russian Federation, St. Petersburg

G. O. Kornyshov

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
Russian Federation, St. Petersburg

N. V. Kryzhanovskaya

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
Russian Federation, St. Petersburg

Yu. M. Shernyakov

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021

A. S. Payusov

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021

M. M. Kulagina

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021

N. A. Kalyuzhnyi

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021

S. A. Mintairov

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021

M. V. Maximov

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
Russian Federation, St. Petersburg

A. E. Zhukov

St. Petersburg National Research Academic University, Russian Academy of Sciences

Author for correspondence.
Email: zhukale@gmail.com
Russian Federation, St. Petersburg


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