Detectors Based on Low-Barrier Mott Diodes and Their Characteristics in the 150–250 GHz Range
- Autores: Volkov P.1, Vostokov N.1, Goryunov A.1, Kukin L.2, Parshin V.2, Serov E.2, Shashkin V.1
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Afiliações:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Institute of Applied Physics, Russian Academy of Sciences
- Edição: Volume 45, Nº 3 (2019)
- Páginas: 239-241
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208244
- DOI: https://doi.org/10.1134/S1063785019030179
- ID: 208244
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Resumo
The characteristics of millimeter-wavelength detectors based on planar Mott diodes with near-surface δ-doping operating without a constant bias are discussed. These detectors have a volt–watt sensitivity of ~1000 V/W with NEP ~ 10 pW/Hz1/2 in the 150–250 GHz range. The obtained estimates reveal the possibility of an additional order-of-magnitude enhancement of the performance characteristics of detectors with smaller areas of the diode barrier contact.
Sobre autores
P. Volkov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
N. Vostokov
Institute for Physics of Microstructures, Russian Academy of Sciences
Autor responsável pela correspondência
Email: vostokov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
A. Goryunov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
L. Kukin
Institute of Applied Physics, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
V. Parshin
Institute of Applied Physics, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
E. Serov
Institute of Applied Physics, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
V. Shashkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: vostokov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950