Properties of the Barium–Strontium Titanate Films Deposited onto the Silicon Substrate by rf Cathode Sputtering
- Autores: Shirokov V.1,2, Zinchenko S.1,2, Kiseleva L.1, Pavlenko A.1,2
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Afiliações:
- Southern Scientific Center
- Southern Federal University
- Edição: Volume 44, Nº 12 (2018)
- Páginas: 1157-1159
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208151
- DOI: https://doi.org/10.1134/S1063785018120568
- ID: 208151
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Resumo
Using rf cathode sputtering of a target in the oxygen atmosphere, Ba0.6Sr0.4TiO3 solid solution thin films have been formed on the single-crystal Si(001) cut surface and their crystal structure, microstructure, and optical characteristics have been investigated. It is shown that the films are optically anisotropic, polycrystalline, and have a c axis preferred direction perpendicular to the substrate. The a and b axes in the substrate plane have no preferred direction. It has been established that, during the synthesis, a buffer layer with a thickness of about 20 nm forms between the film and substrate, which is optically equivalent to silicon oxide.
Sobre autores
V. Shirokov
Southern Scientific Center; Southern Federal University
Autor responsável pela correspondência
Email: shirokov-vb@rambler.ru
Rússia, Rostov-on-Don, 344006; Rostov-on-Don, 344006
S. Zinchenko
Southern Scientific Center; Southern Federal University
Email: shirokov-vb@rambler.ru
Rússia, Rostov-on-Don, 344006; Rostov-on-Don, 344006
L. Kiseleva
Southern Scientific Center
Email: shirokov-vb@rambler.ru
Rússia, Rostov-on-Don, 344006
A. Pavlenko
Southern Scientific Center; Southern Federal University
Email: shirokov-vb@rambler.ru
Rússia, Rostov-on-Don, 344006; Rostov-on-Don, 344006