Enviar artigo por via de e-mail Crystallization of amorphous hydrogenated silicon (a-Si:H) films under irradiation with femtosecond laser pulses
- Autores: Belik V.1, Vasyutinskii O.1, Kukin A.1, Petrov M.1,2, Popov R.1,2, Terukov E.1,3
-
Afiliações:
- Ioffe Physical Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- R&D Center for Thin-Film Technologies in Energetics
- Edição: Volume 42, Nº 8 (2016)
- Páginas: 788-791
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/200371
- DOI: https://doi.org/10.1134/S1063785016080058
- ID: 200371
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
Crystallization of thin films of amorphous hydrogenated silicon under the irradiation of femtosecond laser pulses has been studied. It was found that the crystallization has a clearly pronounced threshold nature and depends on the laser emission wavelength. As shown the best results are achieved in crystallization at the laser wavelength range of 740–760 nm.
Sobre autores
V. Belik
Ioffe Physical Technical Institute
Autor responsável pela correspondência
Email: v.belik@mail.ioffe.ru
Rússia, St. Petersburg, 194021
O. Vasyutinskii
Ioffe Physical Technical Institute
Email: v.belik@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Kukin
Ioffe Physical Technical Institute
Email: v.belik@mail.ioffe.ru
Rússia, St. Petersburg, 194021
M. Petrov
Ioffe Physical Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: v.belik@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 195251
R. Popov
Ioffe Physical Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: v.belik@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 195251
E. Terukov
Ioffe Physical Technical Institute; R&D Center for Thin-Film Technologies in Energetics
Email: v.belik@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 194064
