Email this article Crystallization of amorphous hydrogenated silicon (a-Si:H) films under irradiation with femtosecond laser pulses
- Authors: Belik V.P.1, Vasyutinskii O.S.1, Kukin A.V.1, Petrov M.A.1,2, Popov R.S.1,2, Terukov E.I.1,3
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Affiliations:
- Ioffe Physical Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- R&D Center for Thin-Film Technologies in Energetics
- Issue: Vol 42, No 8 (2016)
- Pages: 788-791
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/200371
- DOI: https://doi.org/10.1134/S1063785016080058
- ID: 200371
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Abstract
Crystallization of thin films of amorphous hydrogenated silicon under the irradiation of femtosecond laser pulses has been studied. It was found that the crystallization has a clearly pronounced threshold nature and depends on the laser emission wavelength. As shown the best results are achieved in crystallization at the laser wavelength range of 740–760 nm.
About the authors
V. P. Belik
Ioffe Physical Technical Institute
Author for correspondence.
Email: v.belik@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
O. S. Vasyutinskii
Ioffe Physical Technical Institute
Email: v.belik@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. V. Kukin
Ioffe Physical Technical Institute
Email: v.belik@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. A. Petrov
Ioffe Physical Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: v.belik@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
R. S. Popov
Ioffe Physical Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: v.belik@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
E. I. Terukov
Ioffe Physical Technical Institute; R&D Center for Thin-Film Technologies in Energetics
Email: v.belik@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194064
