Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
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Аннотация

Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 μm is formed near the side surface, which leads to a decrease in the effective current flow area.

Авторлар туралы

F. Zubov

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
Ресей, St. Petersburg

E. Moiseev

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
Ресей, St. Petersburg

G. Kornyshov

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
Ресей, St. Petersburg

N. Kryzhanovskaya

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
Ресей, St. Petersburg

Yu. Shernyakov

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021

A. Payusov

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021

M. Kulagina

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021

N. Kalyuzhnyi

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021

S. Mintairov

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
Ресей, St. Petersburg, 194021

M. Maximov

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
Ресей, St. Petersburg

A. Zhukov

St. Petersburg National Research Academic University, Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: zhukale@gmail.com
Ресей, St. Petersburg


© Pleiades Publishing, Ltd., 2019

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