Peculiarities of Silicon-Donor Ionization and Electron Scattering in Pseudomorphous AlGaAs/InGaAs/GaAs Quantum Wells with Heavy Unilateral Delta-Doping
- Авторлар: Safonov D.1, Vinichenko A.1,2, Kargin N.1, Vasil’evskii I.1
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Мекемелер:
- National Research Nuclear University Moscow Engineering Physics Institute
- Immanuel Kant Baltic Federal University
- Шығарылым: Том 44, № 2 (2018)
- Беттер: 145-148
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207287
- DOI: https://doi.org/10.1134/S106378501802027X
- ID: 207287
Дәйексөз келтіру
Аннотация
The influence of the concentration of silicon donors on the electron-transport properties of pseudomorphous Al0.25Ga0.75As/In0.2Ga0.8As/GaAs quantum wells (QWs) in heterostructures with heavy unilateral δ-doping by Si atoms was studied in a broad temperature interval (2.1–300 K). High electron mobility (up to 35700 cm2/(V s)) at T = 4.2 K was observed at a 2D (sheet) electron density of 2 × 1012 cm–2 in the QW. A band mechanism limiting the ionization of donors at an increased level of doping is described. The nonmonotonic variation of electron mobility with increasing silicon concentration is explained. A growth in the mobility is related to increase in the Fermi momentum and screening, while the subsequent decay is caused by tunneling-induced degradation of the spacer layer with decreasing potential of the conduction band in the region of δ-Si layer. It is shown that the effect is not related to filling of the upper subband of dimensional quantization.
Авторлар туралы
D. Safonov
National Research Nuclear University Moscow Engineering Physics Institute
Хат алмасуға жауапты Автор.
Email: safonov.dan@mail.ru
Ресей, Moscow, 115409
A. Vinichenko
National Research Nuclear University Moscow Engineering Physics Institute; Immanuel Kant Baltic Federal University
Email: safonov.dan@mail.ru
Ресей, Moscow, 115409; Kaliningrad, 236041
N. Kargin
National Research Nuclear University Moscow Engineering Physics Institute
Email: safonov.dan@mail.ru
Ресей, Moscow, 115409
I. Vasil’evskii
National Research Nuclear University Moscow Engineering Physics Institute
Email: safonov.dan@mail.ru
Ресей, Moscow, 115409