Peculiarities of Silicon-Donor Ionization and Electron Scattering in Pseudomorphous AlGaAs/InGaAs/GaAs Quantum Wells with Heavy Unilateral Delta-Doping
- 作者: Safonov D.1, Vinichenko A.1,2, Kargin N.1, Vasil’evskii I.1
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隶属关系:
- National Research Nuclear University Moscow Engineering Physics Institute
- Immanuel Kant Baltic Federal University
- 期: 卷 44, 编号 2 (2018)
- 页面: 145-148
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207287
- DOI: https://doi.org/10.1134/S106378501802027X
- ID: 207287
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详细
The influence of the concentration of silicon donors on the electron-transport properties of pseudomorphous Al0.25Ga0.75As/In0.2Ga0.8As/GaAs quantum wells (QWs) in heterostructures with heavy unilateral δ-doping by Si atoms was studied in a broad temperature interval (2.1–300 K). High electron mobility (up to 35700 cm2/(V s)) at T = 4.2 K was observed at a 2D (sheet) electron density of 2 × 1012 cm–2 in the QW. A band mechanism limiting the ionization of donors at an increased level of doping is described. The nonmonotonic variation of electron mobility with increasing silicon concentration is explained. A growth in the mobility is related to increase in the Fermi momentum and screening, while the subsequent decay is caused by tunneling-induced degradation of the spacer layer with decreasing potential of the conduction band in the region of δ-Si layer. It is shown that the effect is not related to filling of the upper subband of dimensional quantization.
作者简介
D. Safonov
National Research Nuclear University Moscow Engineering Physics Institute
编辑信件的主要联系方式.
Email: safonov.dan@mail.ru
俄罗斯联邦, Moscow, 115409
A. Vinichenko
National Research Nuclear University Moscow Engineering Physics Institute; Immanuel Kant Baltic Federal University
Email: safonov.dan@mail.ru
俄罗斯联邦, Moscow, 115409; Kaliningrad, 236041
N. Kargin
National Research Nuclear University Moscow Engineering Physics Institute
Email: safonov.dan@mail.ru
俄罗斯联邦, Moscow, 115409
I. Vasil’evskii
National Research Nuclear University Moscow Engineering Physics Institute
Email: safonov.dan@mail.ru
俄罗斯联邦, Moscow, 115409