Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System)
- Authors: Illarionov Y.Y.1,2, Banshchikov A.G.1, Sokolov N.S.1, Wachter S.3, Vexler M.I.1
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Affiliations:
- Ioffe Physical Technical Institute
- Institute of Microelectronics
- Institute of Photonics
- Issue: Vol 44, No 12 (2018)
- Pages: 1188-1191
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208160
- DOI: https://doi.org/10.1134/S1063785018120441
- ID: 208160
Cite item
Abstract
The effect of increasing the tunnel current in a metal–calcium fluoride–silicon structure with addition of a silicon dioxide layer between fluoride and metal (which seems paradoxical at first glance) has been considered. This effect of nonmonotonic change in the tunnel conductivity with an increase in the insulator thickness may occur at a relatively high bias at the structure and is related to the tunnel-barrier deformation, at which electrons are tunneling through its part formed by the oxide. At low biases, the occurrence/ thickening of an additional layer leads to a natural decrease in the current. Similar behavior is possible in principle for some other combinations of materials.
About the authors
Yu. Yu. Illarionov
Ioffe Physical Technical Institute; Institute of Microelectronics
Email: vexler@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; Vienna, 1040
A. G. Banshchikov
Ioffe Physical Technical Institute
Email: vexler@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. S. Sokolov
Ioffe Physical Technical Institute
Email: vexler@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. Wachter
Institute of Photonics
Email: vexler@mail.ioffe.ru
Austria, Vienna, 1040
M. I. Vexler
Ioffe Physical Technical Institute
Author for correspondence.
Email: vexler@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021