Emission Regimes of 1.06 μm Spectral Bandwidth Two-Sectional Lasers with Quantum Dot Based Active Layer
- Authors: Gadzhiyev I.M.1, Buyalo M.S.1, Payusov A.S.1, Gubenko A.E.2, Mikhrin S.S.2, Nevedomsky V.N.1, Portnoi E.L.1
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Affiliations:
- Ioffe Institute
- Innolume GmbH
- Issue: Vol 44, No 11 (2018)
- Pages: 965-968
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208014
- DOI: https://doi.org/10.1134/S1063785018110068
- ID: 208014
Cite item
Abstract
We have investigated two-sectional semiconductor lasers with an active region comprising five layers of InGaAs quantum dots, emitting in the spectral range near 1.06 μm. Regimes of passive mode-locking, passive Q-switching, and mode-locking with pulse modulated amplitude are realized. The transition conditions between generation regimes are investigated. The frequency tuning range with current increase in the Q-switched regime exceeds more than 4 times. The duration of the mode-locked pulses was 2 ps at the pulse repetition rate of 44.3 GHz.
About the authors
I. M. Gadzhiyev
Ioffe Institute
Email: mikhail.buyalo@gmail.com
Russian Federation, St. Petersburg, 194021
M. S. Buyalo
Ioffe Institute
Author for correspondence.
Email: mikhail.buyalo@gmail.com
Russian Federation, St. Petersburg, 194021
A. S. Payusov
Ioffe Institute
Email: mikhail.buyalo@gmail.com
Russian Federation, St. Petersburg, 194021
A. E. Gubenko
Innolume GmbH
Email: mikhail.buyalo@gmail.com
Germany, Dortmund
S. S. Mikhrin
Innolume GmbH
Email: mikhail.buyalo@gmail.com
Germany, Dortmund
V. N. Nevedomsky
Ioffe Institute
Email: mikhail.buyalo@gmail.com
Russian Federation, St. Petersburg, 194021
E. L. Portnoi
Ioffe Institute
Email: mikhail.buyalo@gmail.com
Russian Federation, St. Petersburg, 194021