Emission Regimes of 1.06 μm Spectral Bandwidth Two-Sectional Lasers with Quantum Dot Based Active Layer
- Autores: Gadzhiyev I.1, Buyalo M.1, Payusov A.1, Gubenko A.2, Mikhrin S.2, Nevedomsky V.1, Portnoi E.1
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Afiliações:
- Ioffe Institute
- Innolume GmbH
- Edição: Volume 44, Nº 11 (2018)
- Páginas: 965-968
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208014
- DOI: https://doi.org/10.1134/S1063785018110068
- ID: 208014
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Resumo
We have investigated two-sectional semiconductor lasers with an active region comprising five layers of InGaAs quantum dots, emitting in the spectral range near 1.06 μm. Regimes of passive mode-locking, passive Q-switching, and mode-locking with pulse modulated amplitude are realized. The transition conditions between generation regimes are investigated. The frequency tuning range with current increase in the Q-switched regime exceeds more than 4 times. The duration of the mode-locked pulses was 2 ps at the pulse repetition rate of 44.3 GHz.
Sobre autores
I. Gadzhiyev
Ioffe Institute
Email: mikhail.buyalo@gmail.com
Rússia, St. Petersburg, 194021
M. Buyalo
Ioffe Institute
Autor responsável pela correspondência
Email: mikhail.buyalo@gmail.com
Rússia, St. Petersburg, 194021
A. Payusov
Ioffe Institute
Email: mikhail.buyalo@gmail.com
Rússia, St. Petersburg, 194021
A. Gubenko
Innolume GmbH
Email: mikhail.buyalo@gmail.com
Alemanha, Dortmund
S. Mikhrin
Innolume GmbH
Email: mikhail.buyalo@gmail.com
Alemanha, Dortmund
V. Nevedomsky
Ioffe Institute
Email: mikhail.buyalo@gmail.com
Rússia, St. Petersburg, 194021
E. Portnoi
Ioffe Institute
Email: mikhail.buyalo@gmail.com
Rússia, St. Petersburg, 194021