Email this article Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium
- Authors: Lebedev S.P.1, Eliseyev I.A.2, Davydov V.Y.1, Smirnov A.N.1,3, Levitskii V.S.4, Mynbaeva M.G.1, Kulagina M.M.1, Hähnlein B.5, Pezoldt J.5, Lebedev A.A.1
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Affiliations:
- Ioffe Physical Technical Institute
- St. Petersburg State University
- St. Petersburg National University of Information Technologies, Mechanics, and Optics (ITMO University)
- R&D Center for Thin Film Technologies in Energetics
- FG Nanotechnologie, Institut für Mikro- und Nanotechnologien und Institut für Mikro- und Nanoelektronik
- Issue: Vol 43, No 9 (2017)
- Pages: 849-852
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/206049
- DOI: https://doi.org/10.1134/S106378501709022X
- ID: 206049
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Abstract
We present the results of investigations of the transport properties of graphene films obtained by thermodestruction of a 4H-SiC (0001) surface in argon. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons approached 6000 cm2/(V · s). The achieved parameters of mobility are close to theoretical values calculated for graphene films with intrinsic conductivity on the Si face of SiC at Т = 300 К in the absence of intercalated hydrogen.
About the authors
S. P. Lebedev
Ioffe Physical Technical Institute
Author for correspondence.
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. A. Eliseyev
St. Petersburg State University
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 199034
V. Yu. Davydov
Ioffe Physical Technical Institute
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. N. Smirnov
Ioffe Physical Technical Institute; St. Petersburg National University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
V. S. Levitskii
R&D Center for Thin Film Technologies in Energetics
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 194064
M. G. Mynbaeva
Ioffe Physical Technical Institute
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. M. Kulagina
Ioffe Physical Technical Institute
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
B. Hähnlein
FG Nanotechnologie, Institut für Mikro- und Nanotechnologien und Institut für Mikro- und Nanoelektronik
Email: lebedev.sergey@mail.ioffe.ru
Germany, Ilmenau
J. Pezoldt
FG Nanotechnologie, Institut für Mikro- und Nanotechnologien und Institut für Mikro- und Nanoelektronik
Email: lebedev.sergey@mail.ioffe.ru
Germany, Ilmenau
A. A. Lebedev
Ioffe Physical Technical Institute
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
