Features of current flow in structures based on Au/Ti/n-InAlAs Schottky barriers
- Authors: Chistokhin I.B.1, Aksenov M.S.1, Valisheva N.A.1, Dmitriev D.V.1, Zhuravlev K.S.1, Guzev A.A.1
-
Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Issue: Vol 43, No 6 (2017)
- Pages: 581-583
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/205128
- DOI: https://doi.org/10.1134/S1063785017060177
- ID: 205128
Cite item
Abstract
Current–voltage (I–V) characteristics of Au/Ti/n-InAlAs/InP Shottky barriers have been studied in a temperature range of 100–380 K. It is established that, as the temperature increases from 100 to 200 K, the ideality factor drops from 1.58 to 1.1, while the barrier height grows from 0.55 to 0.69 eV. With a subsequent temperature increase from 200 to 380 K, both the ideality factor and barrier height vary, but only weakly. This behavior agrees well with the model of lateral inhomogeneity of the barrier height (Tung model), which is confirmed by the linear dependence of the barrier height on the ideality factor at temperatures within 100–200 K. Calculations according to this model yielded the value of 0.88 eV for the homogeneous-junction barrier height, 10–4 cm2/3 V1/3 for the mean-square deviation of the Gaussian distribution of barrier heights, 3.7 × 10–11 cm2 for the effective area of regions with reduced barrier heights, and 10.7 A cm–2 K–2 for the Richardson constant.
About the authors
I. B. Chistokhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: igor@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
M. S. Aksenov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: igor@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
N. A. Valisheva
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: igor@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
D. V. Dmitriev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: igor@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
K. S. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: igor@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. A. Guzev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: igor@isp.nsc.ru
Russian Federation, Novosibirsk, 630090