Specific features of current flow in α-Si : H/Si heterojunction solar cells
- Authors: Sachenko A.V.1, Kostylyov V.P.1, Sokolovskyi I.O.1, Bobyl’ A.V.2, Verbitskii V.N.2, Terukov E.I.2,3, Shvarts M.Z.2
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Affiliations:
- Lashkarev Institute of Semiconductor Physics
- Ioffe Physical-Technical Institute
- Scientific and Engineering Center for Thin-Film Technology in Energetics
- Issue: Vol 43, No 2 (2017)
- Pages: 152-155
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/203324
- DOI: https://doi.org/10.1134/S1063785017020109
- ID: 203324
Cite item
Abstract
Specific features of the formation of dark I–V characteristics of α-Si: H/Si heterojunction solar cells are investigated taking account the ratio between silicon doping level Nd and excess concentration Δn of electron–hole pairs. It is demonstrated that, at Δn ≥ Nd, the I–V characteristic is fundamentally different from the characteristic of a classical Shockley diode due the effect of the backside surface (additional drop of the applied voltage). The results of analysis are used to describe the experimental I–V characteristics reported in studies on α-Si: H/Si heterojunction solar cells. Numerical values of the ideality factors of the dark I–V characteristics are obtained by comparing the experimental and calculated curves.
About the authors
A. V. Sachenko
Lashkarev Institute of Semiconductor Physics
Author for correspondence.
Email: sach@isp.kiev.ua
Ukraine, Kyiv, 03028
V. P. Kostylyov
Lashkarev Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ukraine, Kyiv, 03028
I. O. Sokolovskyi
Lashkarev Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ukraine, Kyiv, 03028
A. V. Bobyl’
Ioffe Physical-Technical Institute
Email: sach@isp.kiev.ua
Russian Federation, St. Petersburg, 194021
V. N. Verbitskii
Ioffe Physical-Technical Institute
Email: sach@isp.kiev.ua
Russian Federation, St. Petersburg, 194021
E. I. Terukov
Ioffe Physical-Technical Institute; Scientific and Engineering Center for Thin-Film Technology in Energetics
Email: sach@isp.kiev.ua
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194064
M. Z. Shvarts
Ioffe Physical-Technical Institute
Email: sach@isp.kiev.ua
Russian Federation, St. Petersburg, 194021