Specific features of current flow in α-Si : H/Si heterojunction solar cells
- Авторлар: Sachenko A.1, Kostylyov V.1, Sokolovskyi I.1, Bobyl’ A.2, Verbitskii V.2, Terukov E.2,3, Shvarts M.2
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Мекемелер:
- Lashkarev Institute of Semiconductor Physics
- Ioffe Physical-Technical Institute
- Scientific and Engineering Center for Thin-Film Technology in Energetics
- Шығарылым: Том 43, № 2 (2017)
- Беттер: 152-155
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/203324
- DOI: https://doi.org/10.1134/S1063785017020109
- ID: 203324
Дәйексөз келтіру
Аннотация
Specific features of the formation of dark I–V characteristics of α-Si: H/Si heterojunction solar cells are investigated taking account the ratio between silicon doping level Nd and excess concentration Δn of electron–hole pairs. It is demonstrated that, at Δn ≥ Nd, the I–V characteristic is fundamentally different from the characteristic of a classical Shockley diode due the effect of the backside surface (additional drop of the applied voltage). The results of analysis are used to describe the experimental I–V characteristics reported in studies on α-Si: H/Si heterojunction solar cells. Numerical values of the ideality factors of the dark I–V characteristics are obtained by comparing the experimental and calculated curves.
Авторлар туралы
A. Sachenko
Lashkarev Institute of Semiconductor Physics
Хат алмасуға жауапты Автор.
Email: sach@isp.kiev.ua
Украина, Kyiv, 03028
V. Kostylyov
Lashkarev Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Украина, Kyiv, 03028
I. Sokolovskyi
Lashkarev Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Украина, Kyiv, 03028
A. Bobyl’
Ioffe Physical-Technical Institute
Email: sach@isp.kiev.ua
Ресей, St. Petersburg, 194021
V. Verbitskii
Ioffe Physical-Technical Institute
Email: sach@isp.kiev.ua
Ресей, St. Petersburg, 194021
E. Terukov
Ioffe Physical-Technical Institute; Scientific and Engineering Center for Thin-Film Technology in Energetics
Email: sach@isp.kiev.ua
Ресей, St. Petersburg, 194021; St. Petersburg, 194064
M. Shvarts
Ioffe Physical-Technical Institute
Email: sach@isp.kiev.ua
Ресей, St. Petersburg, 194021