Ion-Beam Deposition of Thin AlN Films on Al2O3 Substrate


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Аннотация

Thin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture composition, ion beam energy, and substrate temperature) on the morphology, structure, and optical properties of obtained thin AlN films on sapphire.

Авторлар туралы

L. Lunin

Federal Research Center, Southern Scientific Center of the Russian Academy of Sciences; Platov South Russian State Polytechnic University

Хат алмасуға жауапты Автор.
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428

O. Devitskii

Federal Research Center, Southern Scientific Center of the Russian Academy of Sciences; North Caucasus Federal University

Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006; Stavropol, 355009

I. Sysoev

North Caucasus Federal University

Email: lunin_ls@mail.ru
Ресей, Stavropol, 355009

A. Pashchenko

Federal Research Center, Southern Scientific Center of the Russian Academy of Sciences; Platov South Russian State Polytechnic University

Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006; Novocherkassk, Rostov oblast, 346428

I. Kas’yanov

North Caucasus Federal University

Email: lunin_ls@mail.ru
Ресей, Stavropol, 355009

D. Nikulin

North Caucasus Federal University

Email: lunin_ls@mail.ru
Ресей, Stavropol, 355009

V. Irkha

Federal Research Center, Southern Scientific Center of the Russian Academy of Sciences

Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006

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