Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures
- Authors: Bokhan P.A.1, Zhuravlev K.S.1,2, Zakrevsky D.E.1,3, Malin T.V.1, Osinnykh I.V.1,2, Fateev N.V.1,2
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Novosibirsk State Technical University
- Issue: Vol 45, No 9 (2019)
- Pages: 951-954
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208436
- DOI: https://doi.org/10.1134/S1063785019090189
- ID: 208436
Cite item
Abstract
Gain characteristics of heavily doped AlxGa1 –xN/AlN:Si structures with c x = 0.65 and 0.74 have been studied under pulsed optical pumping by Nd:YAG laser radiation at wavelength λ = 266 nm. The absolute values of the optical gain measured at spectral maximum of the room-temperature luminescence spectrum reach (0.5–6) × 103 сm–1 at an pumping power density of 8–600 kW/cm2. Cross sections of the radiative and donor–acceptor recombination are close to each other and exceed 1016 cm2.
About the authors
P. A. Bokhan
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: zakrdm@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
K. S. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: zakrdm@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
Dm. E. Zakrevsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State Technical University
Author for correspondence.
Email: zakrdm@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630073
T. V. Malin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: zakrdm@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
I. V. Osinnykh
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: zakrdm@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
N. V. Fateev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: zakrdm@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090