Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures
- Autores: Bokhan P.1, Zhuravlev K.1,2, Zakrevsky D.1,3, Malin T.1, Osinnykh I.1,2, Fateev N.1,2
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Novosibirsk State Technical University
- Edição: Volume 45, Nº 9 (2019)
- Páginas: 951-954
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208436
- DOI: https://doi.org/10.1134/S1063785019090189
- ID: 208436
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Resumo
Gain characteristics of heavily doped AlxGa1 –xN/AlN:Si structures with c x = 0.65 and 0.74 have been studied under pulsed optical pumping by Nd:YAG laser radiation at wavelength λ = 266 nm. The absolute values of the optical gain measured at spectral maximum of the room-temperature luminescence spectrum reach (0.5–6) × 103 сm–1 at an pumping power density of 8–600 kW/cm2. Cross sections of the radiative and donor–acceptor recombination are close to each other and exceed 1016 cm2.
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Sobre autores
P. Bokhan
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
Dm. Zakrevsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State Technical University
Autor responsável pela correspondência
Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630073
T. Malin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090
I. Osinnykh
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
N. Fateev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: zakrdm@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090