Characteristics of a Silicon Avalanche Photodiode for the Near-IR Spectral Range

P. N. Aruev; B. Ya Ber; A. N. Gorokhov; V. V. Zabrodskii; D. Yu. Kazantsev; A. V. Nikolaev; V. V. Filimonov; M. Z. Shvarts; E. V. Sherstnev

doi:10.1134/S1063785019080054

Characteristics of a Silicon Avalanche Photodiode for the Near-IR Spectral Range

Authors: Aruev P.N.¹, Ber B.Y.¹, Gorokhov A.N.¹, Zabrodskii V.V.¹, Kazantsev D.Y.¹, Nikolaev A.V.¹, Filimonov V.V.¹, Shvarts M.Z.¹, Sherstnev E.V.¹
Affiliations:
1. Ioffe Physical Technical Institute, Russian Academy of Sciences
Issue: Vol 45, No 8 (2019)
Pages: 780-782
Section: Article
URL: https://journals.rcsi.science/1063-7850/article/view/208392
DOI: https://doi.org/10.1134/S1063785019080054
ID: 208392

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Abstract

The sensitivity at wavelengths in the range 400–1150 nm, dark current, and dynamic characteristics of an silicon avalanche photodiode with an active region 1.5 mm in diameter that we developed have been examined. It has been shown that the avalanche photodiode has the following set of characteristics: sensitivity 80–85 A/W at wavelengths of 900–1010 nm, dark current 1.5 nA, and leading and trailing edges shorter than 2.5 ns at a reverse bias voltage of 350 V.