Characteristics of a Silicon Avalanche Photodiode for the Near-IR Spectral Range

Abstract

The sensitivity at wavelengths in the range 400–1150 nm, dark current, and dynamic characteristics of an silicon avalanche photodiode with an active region 1.5 mm in diameter that we developed have been examined. It has been shown that the avalanche photodiode has the following set of characteristics: sensitivity 80–85 A/W at wavelengths of 900–1010 nm, dark current 1.5 nA, and leading and trailing edges shorter than 2.5 ns at a reverse bias voltage of 350 V.