A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC
- Authors: Lebedev A.A.1,2, Nikitina I.P.1, Seredova N.V.1, Poletaev N.K.1, Lebedev S.P.1, Kozlovski V.V.3, Zubov A.V.4
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Affiliations:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- St. Petersburg State Electrotechnical University LETI
- Peter the Great St. Petersburg Polytechnic University
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
- Issue: Vol 45, No 6 (2019)
- Pages: 557-559
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208330
- DOI: https://doi.org/10.1134/S1063785019060117
- ID: 208330
Cite item
Abstract
Photoluminescence (PL) spectra have been studied in 3C-SiC/4H-SiC heterostructures and 3C‑SiC single crystals. It was shown that epitaxial 3C-SiC layers grown on 4H-SiC substrates have a markedly poorer crystal perfection than do 3C-SiC single crystals. It was found that doping with aluminum gives rise to a characteristic PL both in epitaxial layers and in 3C-SiC single crystals. At the same time, the electron irradiation of epitaxial layers does not give rise to defect-related PL, in contrast to what is observed for single crystals. An assumption is made that the twin boundaries existing in epitaxial 3C-SiC layers can serve as getters of radiation defects that are components of donor–acceptor pairs responsible for the “defect-related” PL.
About the authors
A. A. Lebedev
Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI
Author for correspondence.
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
I. P. Nikitina
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. V. Seredova
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. K. Poletaev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. P. Lebedev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Kozlovski
Peter the Great St. Petersburg Polytechnic University
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 195021
A. V. Zubov
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101