Email this article Temperature Dependence of the Parameters of 1.55-μm Semiconductor Lasers with Thin Quantum Wells Based on Phosphorus-Free Heterostructures
- Authors: Maksimov M.V.1, Shernyakov Y.M.1,2, Zubov F.I.1, Novikov I.I.3, Gladyshev A.G.3, Karachinsky L.Y.2,4, Denisov D.V.4,5, Rochas S.S.3, Kolodeznyi E.S.3, Egorov A.Y.3, Zhukov A.E.1,5
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Affiliations:
- St. Petersburg Academic University, Russian Academy of Sciences
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- St. Petersburg National Research Universty of Information Technologies, Mechanics and Optics (ITMO University)
- Connector Optics LLC
- St. Petersburg Electrotechnical University LETI
- Issue: Vol 45, No 6 (2019)
- Pages: 549-552
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208328
- DOI: https://doi.org/10.1134/S1063785019060129
- ID: 208328
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Abstract
InGaAs/InGaAlAs laser diodes operating in the 1.55-μm spectral range are studied. It is demonstrated that a certain level of carbon doping (1012 cm–2 per a single quantum well) allows one to reduce the temperature coefficient of variation of the lasing wavelength in such structures and raise the characteristic temperature of threshold current and differential efficiency at temperatures from 16 to ~50°C. These changes are accompanied by an increase in threshold current density and a reduction in differential efficiency.
About the authors
M. V. Maksimov
St. Petersburg Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021
Yu. M. Shernyakov
St. Petersburg Academic University, Russian Academy of Sciences; Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
F. I. Zubov
St. Petersburg Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021
I. I. Novikov
St. Petersburg National Research Universty of Information Technologies, Mechanics and Optics (ITMO University)
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 197101
A. G. Gladyshev
St. Petersburg National Research Universty of Information Technologies, Mechanics and Optics (ITMO University)
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 197101
L. Ya. Karachinsky
Ioffe Physical Technical Institute, Russian Academy of Sciences; Connector Optics LLC
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194292
D. V. Denisov
Connector Optics LLC; St. Petersburg Electrotechnical University LETI
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194292; St. Petersburg, 197376
S. S. Rochas
St. Petersburg National Research Universty of Information Technologies, Mechanics and Optics (ITMO University)
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 197101
E. S. Kolodeznyi
St. Petersburg National Research Universty of Information Technologies, Mechanics and Optics (ITMO University)
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 197101
A. Yu. Egorov
St. Petersburg National Research Universty of Information Technologies, Mechanics and Optics (ITMO University)
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 197101
A. E. Zhukov
St. Petersburg Academic University, Russian Academy of Sciences; St. Petersburg Electrotechnical University LETI
Author for correspondence.
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
