Mechanisms of Frequency-Dependent Conductivity of Mesoporous Silicon at γ Irradiation with Small Doses
- Authors: Galushka V.V.1, Zharkova E.A.1, Terin D.V.1,2, Sidorov V.I.1, Khasina E.I.1
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Affiliations:
- Saratov State University
- Yuri Gagarin State Technical University of Saratov
- Issue: Vol 45, No 6 (2019)
- Pages: 533-536
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208324
- DOI: https://doi.org/10.1134/S1063785019060063
- ID: 208324
Cite item
Abstract
Abstract—The effect of low-dose γ radiation on the mechanisms of low-frequency conductivity of mesoporous silicon has been studied. It has been shown that γ irradiation preserves the hopping character of conductivity at a change of the frequency of phonon lattice vibrations, a decrease in the size of the hop, and a shift of the level of the capture of traps to the Fermi level in the band gap, which makes the structure with mesoporous silicon irradiated by γ radiation promising for the creation of multifunctional resistive and capacitive devices.
About the authors
V. V. Galushka
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
E. A. Zharkova
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
D. V. Terin
Saratov State University; Yuri Gagarin State Technical University of Saratov
Author for correspondence.
Email: lab32@mail.ru
Russian Federation, Saratov, 410012; Saratov, 410054
V. I. Sidorov
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012
E. I. Khasina
Saratov State University
Email: lab32@mail.ru
Russian Federation, Saratov, 410012