Email this article The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes
- Authors: Chistokhin I.B.1, Aksenov M.S.1,2, Valisheva N.1, Dmitriev D.V.1, Marchishin I.V.1, Toropov A.I.1, Zhuravlev K.S.1,2
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Issue: Vol 45, No 2 (2019)
- Pages: 180-184
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208227
- DOI: https://doi.org/10.1134/S106378501902024X
- ID: 208227
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Abstract
Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥107 cm–2, these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.
About the authors
I. B. Chistokhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: m.se.aksenov@gmail.com
Russian Federation, Novosibirsk, 630090
M. S. Aksenov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Author for correspondence.
Email: m.se.aksenov@gmail.com
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
N. A. Valisheva
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: m.se.aksenov@gmail.com
Russian Federation, Novosibirsk, 630090
D. V. Dmitriev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: m.se.aksenov@gmail.com
Russian Federation, Novosibirsk, 630090
I. V. Marchishin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: m.se.aksenov@gmail.com
Russian Federation, Novosibirsk, 630090
A. I. Toropov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: m.se.aksenov@gmail.com
Russian Federation, Novosibirsk, 630090
K. S. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: m.se.aksenov@gmail.com
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
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