电邮这篇文章 BaTiO3/LaSrMnO3 Heterostructure Grown on Sapphire for Ferroelectric Tunneling Junctions
- 作者: Gagarin A.G.1, Tumarkin A.V.1, Sapego E.N.1, Kunkel’ T.S.2,3, Stozharov V.M.4
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隶属关系:
- St. Petersburg Electrotechnical University LETI
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- The Herzen State Pedagogical University of Russia
- 期: 卷 45, 编号 2 (2019)
- 页面: 152-154
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208219
- DOI: https://doi.org/10.1134/S1063785019020263
- ID: 208219
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详细
BaTiO3/LaSrMnO3 (BTO/LSMO) structures with a ferroelectric layer thickness of 10 nm have been formed on r-cut sapphire substrate by means of high-frequency magnetron sputtering. Investigations of the sample structure showed the presence of a crystalline phase, while measurements of electrical properties revealed piezoelectric response of the BTO films. The study of local current–voltage characteristics showed dependence of the sample resistance on the prehistory of voltage application as determined by ferroelectric hysteresis of the BTO layer.
作者简介
A. Gagarin
St. Petersburg Electrotechnical University LETI
编辑信件的主要联系方式.
Email: AGGagarin@gmail.com
俄罗斯联邦, St. Petersburg, 197376
A. Tumarkin
St. Petersburg Electrotechnical University LETI
Email: AGGagarin@gmail.com
俄罗斯联邦, St. Petersburg, 197376
E. Sapego
St. Petersburg Electrotechnical University LETI
Email: AGGagarin@gmail.com
俄罗斯联邦, St. Petersburg, 197376
T. Kunkel’
Peter the Great St. Petersburg Polytechnic University; Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: AGGagarin@gmail.com
俄罗斯联邦, St. Petersburg, 195251; St. Petersburg, 194021
V. Stozharov
The Herzen State Pedagogical University of Russia
Email: AGGagarin@gmail.com
俄罗斯联邦, St. Petersburg, 191186
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