The Reliability of Revealing Threading Dislocations in Epitaxial Films by Structure-Sensitive Etching
- Authors: Deryabin A.S.1, Sokolov L.V.1, Trukhanov E.M.1, Fritzler K.B.1
-
Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Issue: Vol 44, No 10 (2018)
- Pages: 916-918
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207989
- DOI: https://doi.org/10.1134/S1063785018100218
- ID: 207989
Cite item
Abstract
Correspondence between threading dislocations (TDs) in epitaxial films and the etch pits observed upon selective chemical etching of the samples was studied in Ge/Si(001) heterostructures. It is established that the density of TDs revealed in epitaxial films with thicknesses h ≤ 1 μm can be significantly understated because of insufficient resolution of optical microscopy. Recommendations are given that increase the reliability of PD density estimation by means of structure-sensitive etching.
About the authors
A. S. Deryabin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: trukh@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
L. V. Sokolov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: trukh@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
E. M. Trukhanov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: trukh@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
K. B. Fritzler
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: trukh@isp.nsc.ru
Russian Federation, Novosibirsk, 630090