The Reliability of Revealing Threading Dislocations in Epitaxial Films by Structure-Sensitive Etching
- Авторы: Deryabin A.1, Sokolov L.1, Trukhanov E.1, Fritzler K.1
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Выпуск: Том 44, № 10 (2018)
- Страницы: 916-918
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207989
- DOI: https://doi.org/10.1134/S1063785018100218
- ID: 207989
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Аннотация
Correspondence between threading dislocations (TDs) in epitaxial films and the etch pits observed upon selective chemical etching of the samples was studied in Ge/Si(001) heterostructures. It is established that the density of TDs revealed in epitaxial films with thicknesses h ≤ 1 μm can be significantly understated because of insufficient resolution of optical microscopy. Recommendations are given that increase the reliability of PD density estimation by means of structure-sensitive etching.
Об авторах
A. Deryabin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: trukh@isp.nsc.ru
Россия, Novosibirsk, 630090
L. Sokolov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: trukh@isp.nsc.ru
Россия, Novosibirsk, 630090
E. Trukhanov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Автор, ответственный за переписку.
Email: trukh@isp.nsc.ru
Россия, Novosibirsk, 630090
K. Fritzler
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: trukh@isp.nsc.ru
Россия, Novosibirsk, 630090