Plasma Reflection in Multigrain Layers of Narrow-Bandgap Semiconductors
- Authors: Zhukov N.D.1, Shishkin M.I.1, Rokakh A.G.1
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Affiliations:
- Saratov State University
- Issue: Vol 44, No 4 (2018)
- Pages: 362-365
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207624
- DOI: https://doi.org/10.1134/S1063785018040284
- ID: 207624
Cite item
Abstract
Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ∼7 μm) is characterized by an absorption band at 2.1–2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.
About the authors
N. D. Zhukov
Saratov State University
Email: shishkin1mikhail@gmail.com
Russian Federation, Saratov, 410012
M. I. Shishkin
Saratov State University
Author for correspondence.
Email: shishkin1mikhail@gmail.com
Russian Federation, Saratov, 410012
A. G. Rokakh
Saratov State University
Email: shishkin1mikhail@gmail.com
Russian Federation, Saratov, 410012