Plasma Reflection in Multigrain Layers of Narrow-Bandgap Semiconductors
- Autores: Zhukov N.1, Shishkin M.1, Rokakh A.1
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Afiliações:
- Saratov State University
- Edição: Volume 44, Nº 4 (2018)
- Páginas: 362-365
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207624
- DOI: https://doi.org/10.1134/S1063785018040284
- ID: 207624
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Resumo
Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ∼7 μm) is characterized by an absorption band at 2.1–2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.
Sobre autores
N. Zhukov
Saratov State University
Email: shishkin1mikhail@gmail.com
Rússia, Saratov, 410012
M. Shishkin
Saratov State University
Autor responsável pela correspondência
Email: shishkin1mikhail@gmail.com
Rússia, Saratov, 410012
A. Rokakh
Saratov State University
Email: shishkin1mikhail@gmail.com
Rússia, Saratov, 410012