Creation and electrical properties of p-Cu2ZnSnS4/n-Si heterojunctions
- Authors: Yusupov A.1, Adambaev K.1, Turaev Z.Z.2, Aliev S.R.3, Kutlimratov A.4
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Affiliations:
- Tashkent Automobile and Road Institute
- Ulugbek National University of Uzbekistan
- Andizhan State University
- Physicotechnical Institute
- Issue: Vol 43, No 1 (2017)
- Pages: 133-135
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/203194
- DOI: https://doi.org/10.1134/S1063785017010291
- ID: 203194
Cite item
Abstract
Anisotype p-Cu2ZnSnS4/n-Si heterojunctions have been manufactured for the first type by sulfidation of base-metal layers predeposited onto polycrystalline silicon substrates. Current–voltage characteristics of the heterojunctions are analyzed, and the mechanisms of current transfer are discussed. It is established that forward-biased structures are characterized by both tunneling-recombination processes and space-charge limited mobility of carriers. In reversely biased heterojunctions, space-charge limited currents predominate.
About the authors
A. Yusupov
Tashkent Automobile and Road Institute
Author for correspondence.
Email: ayus@mail.ru
Uzbekistan, Tashkent, 100060
K. Adambaev
Tashkent Automobile and Road Institute
Email: ayus@mail.ru
Uzbekistan, Tashkent, 100060
Z. Z. Turaev
Ulugbek National University of Uzbekistan
Email: ayus@mail.ru
Uzbekistan, Tashkent, 100174
S. R. Aliev
Andizhan State University
Email: ayus@mail.ru
Uzbekistan, Andizhan, 710000
A. Kutlimratov
Physicotechnical Institute
Email: ayus@mail.ru
Uzbekistan, Tashkent, 100084