Polishing superhard material surfaces with gas-cluster ion beams


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Аннотация

We have studied the influence of bombardment with accelerated gas-cluster ions on the surface topography of silicon carbide and diamond. Atomic-force microscopy shows that exposure to 10-keV gas-cluster ions at a total dose above 1016 cm–2 leads to smoothing of the surface relief. The ion-etching rate and efficiency of the surface relief smoothing as dependent on the thickness of removed layer have been estimated. Raman-spectroscopy data show that surface irradiation with gas-cluster ions does not introduce defects into the crystalline structure of irradiated material.

Авторлар туралы

A. Ieshkin

Department of Physics

Хат алмасуға жауапты Автор.
Email: ieshkin@physics.msu.ru
Ресей, Moscow, 119991

K. Kushkina

Department of Physics

Email: ieshkin@physics.msu.ru
Ресей, Moscow, 119991

D. Kireev

Department of Physics

Email: ieshkin@physics.msu.ru
Ресей, Moscow, 119991

Yu. Ermakov

Skobeltsyn Institute of Nuclear Physics

Email: ieshkin@physics.msu.ru
Ресей, Moscow, 119991

V. Chernysh

Department of Physics; Skobeltsyn Institute of Nuclear Physics

Email: ieshkin@physics.msu.ru
Ресей, Moscow, 119991; Moscow, 119991

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