Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
- Authors: Tarala V.A.1, Altakhov A.S.1, Ambartsumov M.G.1, Martens V.Y.1
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Affiliations:
- North Caucasus Federal University
- Issue: Vol 43, No 1 (2017)
- Pages: 74-77
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/202475
- DOI: https://doi.org/10.1134/S1063785017010138
- ID: 202475
Cite item
Abstract
The possibility of growing oriented AlN films on Al2O3 substrates at temperatures below 300°C by plasma-enhanced atomic layer deposition was examined. The samples were subjected to X-ray phase analysis and ellipsometry. It was demonstrated that the refraction index of films deposited with plasma exposures longer than 20 s was 2.03 ± 0.03. The (0002) and (0004) reflections at 2Θ angles of 35.7° and 75.9° were present in the X-ray diffraction patterns of these samples. These reflections are typical of the hexagonal AlN polytype. The full width at half maximum of the rocking curve of reflection (0002) in the best sample was 162 ± 11 arcsec.
About the authors
V. A. Tarala
North Caucasus Federal University
Author for correspondence.
Email: vitaly-tarala@yandex.ru
Russian Federation, Stavropol, 355009
A. S. Altakhov
North Caucasus Federal University
Email: vitaly-tarala@yandex.ru
Russian Federation, Stavropol, 355009
M. G. Ambartsumov
North Caucasus Federal University
Email: vitaly-tarala@yandex.ru
Russian Federation, Stavropol, 355009
V. Ya. Martens
North Caucasus Federal University
Email: vitaly-tarala@yandex.ru
Russian Federation, Stavropol, 355009