Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
- Authors: Emtsev V.V.1, Zavarin E.E.1, Kozlovskii M.A.1, Kudoyarov M.F.1, Lundin V.V.1, Oganesyan G.A.1, Petrov V.N.1, Poloskin D.S.1, Sakharov A.V.1, Troshkov S.I.1, Shmidt N.M.1, V’yuginov V.N.2, Zybin A.A.2, Parnes Y.M.2, Vidyakin S.I.3, Gudkov A.G.3, Chernyakov A.E.4, Kozlovskii V.V.5
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Affiliations:
- Ioffe Physical Technical Institute
- Svetlana-Elektronpribor Company
- Bauman Moscow State Technical University
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 42, No 11 (2016)
- Pages: 1079-1082
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/201884
- DOI: https://doi.org/10.1134/S1063785016110031
- ID: 201884
Cite item
Abstract
It has been shown that the interaction of 1 MeV protons at doses of (0.5–2) × 1014 cm–2 with transistor structures having a 2D AlGaN/GaN channel (AlGaN/GaN HEMTs) is accompanied not only by the generation of point defects, but also by the formation of local regions with a disordered nanomaterial. The degree of disorder of the nanomaterial was evaluated by multifractal analysis methods. An increase in the degree of disorder of the nanomaterial, manifested the most clearly at a proton dose of 2 × 1014 cm–2, leads to several-fold changes in the mobility and electron density in the 2D channel of HEMT structures. In this case, the transistors show a decrease in the source–drain current and an order-of-magnitude increase in the gate leakage current. In HEMT structures having an enhanced disorder of the nanomaterial prior to exposure to protons, proton irradiation results in suppression of the 2D conductivity in the channel and failure of the transistors, even at a dose of 1 × 1014 cm–2.
About the authors
V. V. Emtsev
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. E. Zavarin
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. A. Kozlovskii
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. F. Kudoyarov
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Lundin
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
G. A. Oganesyan
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. N. Petrov
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. S. Poloskin
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. V. Sakharov
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. I. Troshkov
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. M. Shmidt
Ioffe Physical Technical Institute
Author for correspondence.
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. N. V’yuginov
Svetlana-Elektronpribor Company
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Zybin
Svetlana-Elektronpribor Company
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Ya. M. Parnes
Svetlana-Elektronpribor Company
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. I. Vidyakin
Bauman Moscow State Technical University
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, Moscow, 105005
A. G. Gudkov
Bauman Moscow State Technical University
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, Moscow, 105005
A. E. Chernyakov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Kozlovskii
Peter the Great St. Petersburg Polytechnic University
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251