Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel

V. V. Emtsev; E. E. Zavarin; M. A. Kozlovskii; M. F. Kudoyarov; V. V. Lundin; G. A. Oganesyan; V. N. Petrov; D. S. Poloskin; A. V. Sakharov; S. I. Troshkov; N. M. Shmidt; V. N. V’yuginov; A. A. Zybin; Ya. M. Parnes; S. I. Vidyakin; A. G. Gudkov; A. E. Chernyakov; V. V. Kozlovskii

doi:10.1134/S1063785016110031

Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel

Autores: Emtsev V.¹, Zavarin E.¹, Kozlovskii M.¹, Kudoyarov M.¹, Lundin V.¹, Oganesyan G.¹, Petrov V.¹, Poloskin D.¹, Sakharov A.¹, Troshkov S.¹, Shmidt N.¹, V’yuginov V.², Zybin A.², Parnes Y.², Vidyakin S.³, Gudkov A.³, Chernyakov A.⁴, Kozlovskii V.⁵
Afiliações:
1. Ioffe Physical Technical Institute
2. Svetlana-Elektronpribor Company
3. Bauman Moscow State Technical University
4. Submicron Heterostructures for Microelectronics Research and Engineering Center
5. Peter the Great St. Petersburg Polytechnic University
Edição: Volume 42, Nº 11 (2016)
Páginas: 1079-1082
Seção: Article
URL: https://journals.rcsi.science/1063-7850/article/view/201884
DOI: https://doi.org/10.1134/S1063785016110031
ID: 201884

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It has been shown that the interaction of 1 MeV protons at doses of (0.5–2) × 10¹⁴ cm^–2 with transistor structures having a 2D AlGaN/GaN channel (AlGaN/GaN HEMTs) is accompanied not only by the generation of point defects, but also by the formation of local regions with a disordered nanomaterial. The degree of disorder of the nanomaterial was evaluated by multifractal analysis methods. An increase in the degree of disorder of the nanomaterial, manifested the most clearly at a proton dose of 2 × 10¹⁴ cm^–2, leads to several-fold changes in the mobility and electron density in the 2D channel of HEMT structures. In this case, the transistors show a decrease in the source–drain current and an order-of-magnitude increase in the gate leakage current. In HEMT structures having an enhanced disorder of the nanomaterial prior to exposure to protons, proton irradiation results in suppression of the 2D conductivity in the channel and failure of the transistors, even at a dose of 1 × 10¹⁴ cm^–2.

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Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel

Texto integral

Resumo

Sobre autores

V. Emtsev

E. Zavarin

M. Kozlovskii

M. Kudoyarov

V. Lundin

G. Oganesyan

V. Petrov

D. Poloskin

A. Sakharov

S. Troshkov

N. Shmidt

V. V’yuginov

A. Zybin

Ya. Parnes

S. Vidyakin

A. Gudkov

A. Chernyakov

V. Kozlovskii

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