Email this article Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions
- Authors: Surnina M.A.1, Akchurin R.K.1, Marmalyuk A.A.1,2, Bagaev T.A.3, Sizov A.L.4
-
Affiliations:
- Lomonosov State University of Fine Chemical Technology
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Sigm Plus Company
- Orion Research and Production Corporation
- Issue: Vol 42, No 7 (2016)
- Pages: 747-749
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/200185
- DOI: https://doi.org/10.1134/S1063785016070294
- ID: 200185
Cite item
Open Access
Access granted
Subscription Access
Abstract
Results of studying the formation of InAs quantum dots (QDs) on GaAs(100) substrates by droplet epitaxy using trimethylindium and arsine (AsH3) as precursors are presented. The growth process was carried out at temperatures within 230–400°C in a horizontal reactor for metalorganic vapor phase epitaxy (MOVPE) using high-purity hydrogen as the carrier gas. Data on the influence of process temperature on the QD size and the density of QD array and results of investigation of the low-temperature photoluminescence of obtained samples are presented.
About the authors
M. A. Surnina
Lomonosov State University of Fine Chemical Technology
Email: rakchur@mail.ru
Russian Federation, Moscow, 119571
R. Kh. Akchurin
Lomonosov State University of Fine Chemical Technology
Author for correspondence.
Email: rakchur@mail.ru
Russian Federation, Moscow, 119571
A. A. Marmalyuk
Lomonosov State University of Fine Chemical Technology; National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: rakchur@mail.ru
Russian Federation, Moscow, 119571; Moscow, 115409
T. A. Bagaev
Sigm Plus Company
Email: rakchur@mail.ru
Russian Federation, Moscow, 117342
A. L. Sizov
Orion Research and Production Corporation
Email: rakchur@mail.ru
Russian Federation, Moscow, 111538
