Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions
- Авторлар: Surnina M.1, Akchurin R.1, Marmalyuk A.1,2, Bagaev T.3, Sizov A.4
-
Мекемелер:
- Lomonosov State University of Fine Chemical Technology
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Sigm Plus Company
- Orion Research and Production Corporation
- Шығарылым: Том 42, № 7 (2016)
- Беттер: 747-749
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/200185
- DOI: https://doi.org/10.1134/S1063785016070294
- ID: 200185
Дәйексөз келтіру
Аннотация
Results of studying the formation of InAs quantum dots (QDs) on GaAs(100) substrates by droplet epitaxy using trimethylindium and arsine (AsH3) as precursors are presented. The growth process was carried out at temperatures within 230–400°C in a horizontal reactor for metalorganic vapor phase epitaxy (MOVPE) using high-purity hydrogen as the carrier gas. Data on the influence of process temperature on the QD size and the density of QD array and results of investigation of the low-temperature photoluminescence of obtained samples are presented.
Авторлар туралы
M. Surnina
Lomonosov State University of Fine Chemical Technology
Email: rakchur@mail.ru
Ресей, Moscow, 119571
R. Akchurin
Lomonosov State University of Fine Chemical Technology
Хат алмасуға жауапты Автор.
Email: rakchur@mail.ru
Ресей, Moscow, 119571
A. Marmalyuk
Lomonosov State University of Fine Chemical Technology; National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: rakchur@mail.ru
Ресей, Moscow, 119571; Moscow, 115409
T. Bagaev
Sigm Plus Company
Email: rakchur@mail.ru
Ресей, Moscow, 117342
A. Sizov
Orion Research and Production Corporation
Email: rakchur@mail.ru
Ресей, Moscow, 111538