Electrophysical properties of Si/SiO2 nanostructures fabricated by direct bonding

Abstract

The results of experimental investigation of diode n⁺⁺–p⁺⁺-Si structures, which were fabricated by direct bonding and have tunneling-thin SiO₂ with Si nanoclusters embedded into the interface, are presented. The memristive effect with bipolar switching is demonstrated. The introduction of Si nanoclusters into the dielectric reduces the randomness of formation of a conducting channel. Intermediate metastable states are observed in the current–voltage characteristics. This may prove to be important for multibit data storage.